escape peak

In EDS analysis, when characteristic X-rays emitted from a specimen are detected with a semiconductor detector, part of the energies of the X-rays entering the detector is used to excite inner-shell electrons of silicon (Si) that is a constituent element of the detector. As a result, a small peak appears in an EDS spectrum at an energy lower than that of characteristic X-rays by the excitation energy of Si. This peak is called an "escape peak" and therefore, care must be taken for spectral analysis.

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