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Liquid Helium Variable Temperature System
(ES-13130HEVT/BU)

Liquid Helium Variable Temperature System (ES-13130HEVT/BU)

Reliable Low-Temperature Control for ESR Measurements

The Liquid Helium Variable Temperature System “ES-13130HEVT/BU" is designed for ESR/EPR measurements requiring stable and precise temperature control over a wide range from 2.5 K to 420 K. The system supports studies of semiconductor defects, magnetic materials, spin dynamics, and photoexcited states with fast cooling performance and excellent temperature stability.

Features

Wide Variable Temperature Range

The system provides precise temperature control from 2.5 to 420 K using liquid helium, enabling a broad range of low-temperature ESR experiments.

  • Variable temperature range: 2.5 to 420 K*

  • Using liquid nitrogen: 80 to 420 K

 

* An additional rotary pump is required for experiments conducted below 4.2 K.

Excellent Temperature Stability

A temperature stability of ±0.5 K enables highly reproducible ESR measurements, even for temperature-sensitive signals.

Easy and Quick Setup

The system can be assembled in approximately 20 minutes, allowing efficient preparation for routine low-temperature measurements.

Fast Cool-Down

Cooling from room temperature to 4.2 K can be achieved in approximately 15 minutes, minimizing waiting time before measurements.

Compatible with Ultraviolet Radiation Apparatus

The system can be used together with ultraviolet radiation apparatuses such as:

  • ES-13080UV2A

  • ES-13090UV04

Related Products

Ultraviolet Radiation Apparatus ES-13080UV2A / ES-13090UV04

 

This enables ESR measurements under UV irradiation for the investigation of photoexcited states and defect centers.

Composition

  • Cryostat(including heater and temperature sensor)

  • Transfer line(including dewar adapter)

  • Flow meter

  • Temperature controller

  • Assembly fixtures and spare parts

Application

ESR Signal of Silicon Dangling Bond

Low-temperature ESR measurements enable sensitive detection of ESR signals originating from silicon dangling bonds. Temperature-dependent analysis is useful for semiconductor material characterization and interface defect studies.

 

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Contacts

JEOL provides a variety of support services to ensure that our customers can use our products with peace of mind.
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