Strain Measurement by Dark Field Electron Holography with Dual Lens Operation
JEOLnews Volume 47, Number 1, 2012
Y.Y. Wang†, J. Li†, A. Domenicucci†, J. Bruley†,
M. Kawaski††, D. Cooper†††, and J. Rouvière††††
† IBM microelectronics division
†† JEOL USA
††† CEA LETI Minatec
†††† CEA DSM INAC
Dark field electron holography with dual lens operation to achieve high spatial resolution is summarized. Its application to measure strain on semiconductor devices is reported and comparison with converging beam electron diffraction (CBED) and nano-beam electron diffraction (NBD) is discussed.
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