The JBX-3050MV/S is a variable-shape electron beam lithography system for masks and reticles up to 45nm node design rule. Its advanced technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat stage.
Features
The JBX-3050MV/S is an electron beam lithography system for mask/reticle fabrication that meets the design rule of 45 nm. This system features pattern writing with high speed, high accuracy and high reliability, achieved by high-end technology.
Specifications
| Stitching accuracy | ≦±3.8 nm |
|---|---|
| Overlay accuracy | ≦±7 nm |
More Info
Are you a medical professional or personnel engaged in medical care?
No
Please be reminded that these pages are not intended to provide the general public with information about the products.