JBX-3200MV is a variable-shaped electron beam lithography system for mask making of 28 nm to 22/20 nm nodes. Its cutting-edge technology achieves high speed, high precision and high reliability. This EB system uses a variable-shaped 50 kV electron beam and a step-and-repeat specimen stage.
Features
Utilizing the merit of the step-and-repeat writing method, this EB system combines various functions such as the writing-dose modulation function and the overlay-writing function, thus making it possible to support versatile corrections required for patterning the next-generation masks and reticles.
Captive mask shops and merchant mask shops in Japan and overseas
(Customer names are not disclosed)
Captive mask shops and merchant mask shops in Japan and overseas
(Customer names are not disclosed)
Specifications
| Stitching accuracy | ≦±3.5 nm |
|---|---|
| Overlay accuracy | ≦±5 nm |
More Info
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