BS-80020CPPS
Plasma Source
for Low-temperature Process
This plasma source is specialized for low-temperature process, for example for a plastic substrate/film. Film quality of vacuum deposited film can be improved by plasma assisted deposition with lowering temperature increase of a substrate. And can also be used for plasma treatment such as cleaning and surface modification.
Features
Can form high density oxide films in a low-temperature process.
Reactive deposition by electron beam excited plasma, associated with ion-assistant effects.
Activated Reactive Evaporation (ARE) technique, promoting highly effective discharge above crucible, to enhance ionization of evaporation materials.
Selectable from CPPS mode, for low-temperature process, and normal plasma mode.
Retrofit to an existing vacuum chamber is possible.
Specifications
| Maximum plasma output | 3.2kW (160V, 20A) |
|---|---|
| Maximum assisted output | 2kW (200V, 10A) |
| Operating pressure | 8×10-3 to 8×10-2Pa (Ar, O2, N2 atmosphere) |
| Discharge gas (Ar) | 8 to 20mL/min |
| Cooling water | 5 to 8 L/min |
| Applicable control power supply | BS-92040CPPC |
Catalogue Download
BS-80020CPPS Plasma Source for Low-temperature Process
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BS-80011BPG High-power Plasma Source for high-density plasma
The plasma source are incorporated into a vacuum chamber and generate high-density plasma. The plasma source can be used as Plasma Assisted Deposition (Ion Plating) and it is possible to improve film properties for optical thin films, protective films and function films. And can also be used for plasma treatment such as cleaning and surface modification.
More Info
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